![]() IGBTs have better short-circuit withstand time, but higher switching losses. This higher efficiency means smaller, lighter heatsinks can be used, saving weight and cost. ![]() MOSFET transistors built on silicon carbide (SiC) can switch at frequencies of 100-200 kHz, with efficiencies of about 97%. The 9 V silicon IGBTs used in inverters to drive an EV’s motor typically switch at 10-20 kHz. However, there are distinctly different choices of devices, topologies and control schemes that can be used for switching in the inverter and onboard charger. New types of transistors are opening up the use of switching topologies such as totem poles and Vienna rectifiers, which offer higher efficiencies than present switching topologies used with silicon MOSFETs and IGBTs. Switching at higher frequencies reduces the size of the magnetics and allows more integration, lower weights and longer range The performance of the switching devices – the transistors – determines the power levels, the efficiency and even the size of the systems. Switching is at the heart of the electrical systems for e-mobility platforms. Nick Flaherty examines how new technologies are boosting the performance of inverters and onboard chargers ![]() (Courtesy of Infineon Technologies) Power Lifters A 22 kW onboard charger design using SiC and IGBTs ![]()
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